发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To solve a problem of the risk of deterioration due to machining time for a large-area semiconductor element, and heat and/or light to a semiconductor layer when a laser beam is used as a means for eliminating one portion of the surface of a semiconductor element in a line. SOLUTION: In the manufacturing method for eliminating one portion of a semiconductor element surface in a line, a wire electrode 102 is arranged while a discharge gap is formed at an area to the surface of a semiconductor element 101, and a voltage pulse is intermittently applied to the wire electrode 102, thus eliminating one portion of the semiconductor element surface in a line. Further, by feeding the wire electrode 102 for machining, thin line-shaped continuous machining can be made.</p>
申请公布号 JP2001156320(A) 申请公布日期 2001.06.08
申请号 JP19990337272 申请日期 1999.11.29
申请人 CANON INC 发明人 TAKEYAMA YOSHIFUMI;MURAKAMI TSUTOMU;TSUZUKI KOJI;SHIMIZU KOICHI;YOSHINO TOSHIHITO
分类号 B23H7/02;H01L21/301;H01L21/3063;H01L31/04;(IPC1-7):H01L31/04;H01L21/306 主分类号 B23H7/02
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