摘要 |
<p>PROBLEM TO BE SOLVED: To solve a problem of the risk of deterioration due to machining time for a large-area semiconductor element, and heat and/or light to a semiconductor layer when a laser beam is used as a means for eliminating one portion of the surface of a semiconductor element in a line. SOLUTION: In the manufacturing method for eliminating one portion of a semiconductor element surface in a line, a wire electrode 102 is arranged while a discharge gap is formed at an area to the surface of a semiconductor element 101, and a voltage pulse is intermittently applied to the wire electrode 102, thus eliminating one portion of the semiconductor element surface in a line. Further, by feeding the wire electrode 102 for machining, thin line-shaped continuous machining can be made.</p> |