发明名称 HEAT TREATMENT EQUIPMENT FOR SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide highly safe heat treatment equipment for a semiconductor wafer which can be controlled easily and can be improved in response at the time of abruptly rise or drop of temperature or performing minute temperature adjustment and, at the same time, does not contaminate the environment. SOLUTION: This heat treatment equipment for semiconductor wafer is provided with a treatment chamber 2, into which a process gas is introduced, a heating means which heats semiconductor wafers 3 housed in the chamber 2, and a heating chamber 5 formed by attaching the heating means in a state, where the heating means surrounds the treatment chamber 2. The heating means is constituted of many heaters 4 for luminous radiation heating, each having an annular luminous radiation section on the front end side of its feeding section and the luminous radiation sections are arranged in parallel with each other, at prescribed intervals along the treatment chamber 2.
申请公布号 JP2001156008(A) 申请公布日期 2001.06.08
申请号 JP19990332941 申请日期 1999.11.24
申请人 TAKAHASHI ICHIRO 发明人 TAKAHASHI ICHIRO
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
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