| 摘要 |
PROBLEM TO BE SOLVED: To obtain a non-volatile memory and an operation method in which read-out operation of a bit line for replacement can be performed appropriately and quickly. SOLUTION: In a non-volatile memory provided with a memory block for actual operation and a memory block for replacement having bit lines 104a, 104b for replacement for replacing a bit line for actual operation of a defective part in the memory block for actual operation when a defect is caused in the memory block for actual operation, the device is provided with sense amplifiers 7a, 7b for actual operation for reading out information of a bit line for actual operation in the memory block for actual operation and a selecting means consisting of bit line selecting circuits 1a, 1b for switching input of the sense amplifiers 7a, 7b for actual operation, and information of the bit lines 104a, 104b for replacement is read out by the sense amplifiers 7a, 7b by switching of the selecting means consisting of the bit line selecting circuits 1a, 1b.
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