| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem where mutual diffusion reaction between aluminum and silicon cannot be completely prevented in the case when a TiN having a small ratio of N atoms to Ti atoms (nitrogen ratio in film) is used itself as a barrier metal. SOLUTION: After a contact hole is formed in an interlayer insulation film, a high melting-point metal film is formed by sputtering to cover the bottom and sides of the contact hole, and a high melting-point metal nitride film is formed successively on the high melting-point metallic film as to cover the bottom and sides of the contact hole, by using a mixed gas of an inert gas and a nitrogen and by sputtering in an atmosphere, where the rate of flow rate of the nitrogen is set not to nitride a target of sputtering. Then, the substrate is annealed in an atmosphere containing oxygen and nitrogen, so that the nitride film of the high melting-point metal is changed into an oxidized nitride film of high melting-point metal, and the high melting-point metal film is allowed to be reacted with the silicon substrate, forming a silicide film of high melting-point metal. Then, a wiring is formed in an arbitrary shape.
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