| 摘要 |
1317583 Semi-conductor devices GENERAL ELECTRIC CO 19 March 1970 [25 April 1969] 13283/70 Heading H1K Contact is made to a silicon wafer by dedopisiting thereon a refractory metal e.g. molybdenum or tungsten, containing one or more dopants and heating to diffuse in the dopants to give a surface concentration of at least 10<SP>19</SP> atoms/cc. without alloying. In a typical embodiment molybdenum containing 3 atomic per cent of boron is deposited, preferably by triode sputtering, on a multi-apertured layer of silicon dioxide, nitride or oxynitride or alumina formed by conventional techniques on on a 111 orientated N type silicon wafer, and optionally coated with silica prior to heating at about 1050‹ C in an inert atmosphere to form a PN junction 1Á deep by boron diffusion. The molybdenum may be pattern-etched before or after the diffusion and the wafer ultimately subdivided into single junction elements which be bonded to headers with gold-antimony solder. In a modification the back contact may consist of a deposited molybdenum-phosphorus layer from which phosphorus diffuses during formation of the PN junctions. A series of junction-isolated resistors can be formed by diffusion from boron doped molybdenum strips which extend across an aperture in an oxide layer on N type silicon and are coated with silica. This silica and parts of the molybdenum strips are then removed by etching to leave P type tracks contacted at their ends by the remaining molybdenum. Lateral transistors with self-registering interdigital electrodes may be formed by a similar process but without removal of the molybdenum. To provide low resistance contacts on a PN junction wafer the opposed P and N faces are completely coated with molybdenum containing boron and phosphorus respectively. After diffusion the wafer is bevelled and the bevel coated with silicone rubber to increase the breakdown voltage. In the manufacture of integrated circuits simultaneous diffusion is effected from mutually spaced patterns of molybdenum containing donors and acceptors respectively via apertures in oxide masking. A bipolar transistor is formed by simultaneous diffusion of a fast diffusing acceptor and slower diffusing donor e.g., boron and antimony into a mask exposed part of a P type base contact layer on an N type silicon wafer. Alternatively after diffusing through oxide masking from molybdenum-boron to form a base region in an N-type silicon wafer the molybdenum is removed save for a U-shaped electrode portion, silica deposited overall and removed from an area within the U and a phosphorus-containing molybdenum layer deposited and heated to form the emitter zone and its contact. |
