| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive organic substance peeling apparatus and a method, assuring higher peeling efficiency by improving both concentration of ozone which reacts with organic substance and reaction temperature. SOLUTION: This apparatus is composed of a support base 11, where semiconductor wafers WF are fixed within a processing chamber 10 to be rotatable and an infrared lamp 12 for heating the wafers WF. Pure water DIW is supplied to the surface of the heated wafers WF from a nozzle 13, and this pure water DIW becomes higher temperature together with a resist layer R on the wafer. Under these conditions, O3 gas is introduced to the chamber 10 from a nozzle 14. High temperature O3 gas is supplied almost uniformly to the resist layer R to obtain the ozone water for peeling the resist. Ozone O3 does not show temperature rise, until it is placed in contact with the wafer. Thereby, the ozone water on the wafer can obtain a higher reaction temperature, while maintaining high concentration and the reaction (turn into CO2) for peeling the resist can be accelerated.
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