发明名称 |
METHOD FOR FABRICATING LOW TEMPERATURE OPERATION SEMICONDUCTOR LASER |
摘要 |
PROBLEM TO BE SOLVED: To provide a distribution feedback type laser having a low threshold value in which low temperature performance is improved. SOLUTION: Probability of laser oscillation occurring in the vicinity of the short wavelength side of a stop band is increased using an active layer 18, a spacer layer 16 and a loss grating layer 14 and the effect of negative gain inclination occurring at the time of detuning of a DFB laser in the positive direction is canceled thus obtaining a method for fabricating a DFB laser having an improved side mode suppression ratio(SMSR) at low temperature.
|
申请公布号 |
JP2001156392(A) |
申请公布日期 |
2001.06.08 |
申请号 |
JP20000348655 |
申请日期 |
2000.11.15 |
申请人 |
LUCENT TECHNOL INC |
发明人 |
JAMBUNATHAN RAM;ROBERTSON ALEXANDER;ENG LARS E;KAMATH KISHORE K;WILT DANIEL PAUL |
分类号 |
H01S5/10;H01S5/12;H01S5/343;(IPC1-7):H01S5/12 |
主分类号 |
H01S5/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|