发明名称 METHOD FOR FABRICATING LOW TEMPERATURE OPERATION SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a distribution feedback type laser having a low threshold value in which low temperature performance is improved. SOLUTION: Probability of laser oscillation occurring in the vicinity of the short wavelength side of a stop band is increased using an active layer 18, a spacer layer 16 and a loss grating layer 14 and the effect of negative gain inclination occurring at the time of detuning of a DFB laser in the positive direction is canceled thus obtaining a method for fabricating a DFB laser having an improved side mode suppression ratio(SMSR) at low temperature.
申请公布号 JP2001156392(A) 申请公布日期 2001.06.08
申请号 JP20000348655 申请日期 2000.11.15
申请人 LUCENT TECHNOL INC 发明人 JAMBUNATHAN RAM;ROBERTSON ALEXANDER;ENG LARS E;KAMATH KISHORE K;WILT DANIEL PAUL
分类号 H01S5/10;H01S5/12;H01S5/343;(IPC1-7):H01S5/12 主分类号 H01S5/10
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