| 摘要 |
PROBLEM TO BE SOLVED: To obtain a conductive antireflection film which can prevent surface reflection of external light as well as suppresses inner reflection to a low value and which can prevent production of a ghost image, even when the film is formed on the surface of a flat CRT by forming first and second layers one of which is a light-absorbing layer, forming third and fourth layers one of which is a light-absorbing layer, and further forming fifth and sixth layers of dielectric layers having prescribed different refractive indices from each other. SOLUTION: This antireflection film is produced by successively laminating on a glass substrate G, a layer of titanium nitride (TiNx) as a first layer, a layer of silicon nitride (SiNx) as a second layer, a layer of silicon oxide (SiO2) as a third layer, a layer of nickel oxide (NiaOx) as a fourth layer, a layer of titanium oxide (TiO2) as a fifth layer, and a layer of silicon oxide (SiO2) as a sixth layer. The thickness of the first layer functioning as a light-absorbing layer is set to 5 to 25 nm, and the thickness of the fourth layer functioning as a light-absorbing layer is set to 5 to 50 nm. |
