| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat type infrared detecting element which is small in the heat capacity of a diaphragm structure, large in infrared-ray absorptivity, and small in its sensitivity variance without greatly increasing stages of a manufacture process. SOLUTION: This heat type infrared detecting element has the diaphragm structure 11 arranged on a semiconductor substrate 8 so that a space having a specific interval is formed. This diaphragm structure 1 has a high-refractive- index film 7 as an infrared-ray absorbing film on the surface of the diaphragm structure 1 and an infared-ray reflecting film below the high-refractive-index film 7. This high-refractive-index film 7 meets a condition d=λ×(1/4(3×n)), where (n) is the refractive index, (d) is the thickness, andλis the wavelength of absorbed infrared rays.
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