发明名称 WAFER SURFACE INSPECTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wafer surface inspection method. SOLUTION: According to algorithm for discriminating the kind of defect on a wafer, if the size of defect measured with a wafer inspection device containing a plurality of dark field part detectors is smaller than a limit value indicating the maximum size of COPs, the kind of defect is decided as being not particles. if the correlation between a plurality of defect size values calculated according to each quantity of light detected with a plurality of dark field part detectors satisfies a reference condition previously set, the kind of defect is decided as being not particles. If the position of the defect measured with the wafer inspection device agrees with a vacancy-rich region of the wafer, the kind of the defect is determined as being not particles. If the three kinds of conditions are all satisfied, the kind of the defects is decided as being COP.
申请公布号 JP2001153636(A) 申请公布日期 2001.06.08
申请号 JP20000299227 申请日期 2000.09.29
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KYO TAIRETSU;CHO KYOO CHUL;KANG KYONG RIM;CHOI SOO YEUL
分类号 G01B11/30;G01N21/88;G01N21/94;G01N21/95;G01N21/956;H01L21/3065;H01L21/66;(IPC1-7):G01B11/30 主分类号 G01B11/30
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