发明名称 |
Phasenverschiebungsmaske, Verfahren zur Herstellung derselben und Belichtungsverfahren unter Verwendung einer solchen Phasenverschiebungsmaske |
摘要 |
A quartz substrate (1) includes a first light transmitting portion (1a) and a second light transmitting portion (1b) which transmit exposure light. The first and second light transmitting portions (1a and 1b) are formed such that exposure light transmitted through respective light transmitting portions are 180 DEG out of phase with each other. A semi-light shielding film (3) is located between first and second light transmitting portion (1a and 1b) and formed in a part of first and second light transmitting portions (1a and 1b). Also, semi-light shielding film (3) has transmittance of at least 3% and not more than 30%. <IMAGE> |
申请公布号 |
DE69426409(T2) |
申请公布日期 |
2001.06.07 |
申请号 |
DE1994626409T |
申请日期 |
1994.08.22 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
NAKAO, SHUJI |
分类号 |
G03F1/08;G03F1/00;G03F1/29;G03F1/30;G03F1/32;G03F1/68;G03F1/80;G03F7/20;H01L21/027;(IPC1-7):G03F1/14 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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