发明名称 |
METHOD OF MANUFACTURING GaN-BASED FILM |
摘要 |
A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. |
申请公布号 |
US2012118222(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113283820 |
申请日期 |
2011.10.28 |
申请人 |
FUJIWARA SHINSUKE;UEMATSU KOJI;YAMAMOTO YOSHIYUKI;SATOH ISSEI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIWARA SHINSUKE;UEMATSU KOJI;YAMAMOTO YOSHIYUKI;SATOH ISSEI |
分类号 |
C30B19/00;C30B23/02;C30B25/02 |
主分类号 |
C30B19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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