| 摘要 |
The invention relates to a method for producing monolithically integrated semiconductor components in an original wafer. At least one polysilicon diode is additionally integrated into a polycrystalline silicon layer that is applied on the original wafer. According to the invention, the charge carrier areas (32', 36') of the at least one polysilicon diode (14) are doped at the same time as the functional charge carrier areas (32, 36) of the semiconductor component (10).
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