| 摘要 |
<p>A described embodiment of the present invention includes an anti-fuse (22) comprising: a first conductive layer (14) having a horizontal major surface and having a substantially vertical sidewall; a thick insulating layer (16) formed on the horizontal major surface of the first conductive layer; a dielectric layer (18) formed on the sidewall; and a second conductive layer (20) formed on the dielectric layer. In an additional embodiment, the first and/or second conductive layers comprise polycrystalline silicon and a conductive material selected from the group of titanium, tungsten, molybdenum, platinum, titanium silicide, tungsten silicide, molybdenum silicide, platinum silicide, titanium nitride and combinations thereof. <IMAGE></p> |
