High quality isolation structure formation

摘要

A method is provided for fabricating an isolation structure, the method including forming a first dielectric layer above a structure and forming an opening in the first dielectric layer and the structure, the opening having sidewalls and a bottom. The method also includes forming a second dielectric layer within the opening on a first portion of the sidewalls and above the bottom of the opening. The method further includes forming a third dielectric layer within the opening adjacent the second dielectric layer and on a second portion of the sidewalls of the opening. The method also further includes passivating bonds in the third dielectric layer to reduce charge-trapping in the third dielectric layer, forming dielectric spacers within the opening adjacent the third dielectric layer and forming a dielectric filler within the opening adjacent the dielectric spacers and above the third dielectric layer.