FLASH MEMORY CELL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a flash memory cell is provided to reduce a unit cell area and to improve reliability and high integration, by using a multi-level technique in the flash memory cell having two transistors and one cell. CONSTITUTION: A floating gate(43) is formed in a predetermined region of a semiconductor substrate(41) by interposing a tunneling oxide layer(42). An ONO layer(44,45,46) and a conductive layer are sequentially formed on the entire surface of the semiconductor substrate including the floating gate. The conductive layer and the ONO layer are selectively eliminated to simultaneously form a control gate and a gate electrode. A source/drain region is formed in the substrate of the semiconductor substrate on both sides of the gate electrode and the control gate.