发明名称 |
MASK PATTERN FOR FORMING STEPPED PATTERN PROFILE |
摘要 |
PURPOSE: A mask pattern for forming a stepped pattern profile is provided to maintain excellent step coverage in a metal interconnection process, by making a stepped slope of a photoresist pattern form an inclined pattern. CONSTITUTION: A mask pattern(10) has a permeating part(11), a non-permeating part(12) and a grating part(13). Light from a light source permeates the permeating part of a glass plate. A non-permeating material is coated on the non-permeating part to prevent the light from permeating the non-permeating part of the glass plate. The non-permeating material of an antenna-type structure is formed along a boundary portion between the permeating part and the non-permeating part so that the quantity of permeating light is controlled by a diffraction effect and an interference effect in the grating part.
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申请公布号 |
KR20010046062(A) |
申请公布日期 |
2001.06.05 |
申请号 |
KR19990049659 |
申请日期 |
1999.11.10 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
LEE, BYEONG CHEOL |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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