| 摘要 |
PURPOSE: A method for manufacturing an isolating layer of a trench structure of a semiconductor device is provided to simplify a manufacturing process and to prevent a silicon pit defect in a bottom portion of a trench, by omitting a process for forming and removing a sacrificial oxide layer in the trench. CONSTITUTION: An active region and an inactive region are defined in a semiconductor substrate(100) by an isolating layer of a trench structure. A pad oxide layer and a nitride layer are sequentially stacked on the substrate. The pad nitride layer and the oxide layer are patterned to form a trench(106) in the exposed substrate by an isolating mask process and an etch process. A predetermined portion of the side surface portion of the pad oxide layer and the nitride layer is etched by performing a wet-etch process regarding the substrate having the trench. The upper corner portion(107') of the trench is gently etched by a dry-etch process. A gap fill oxide layer is buried in the trench, and the surface of the gap fill oxide layer is polished. The pad nitride layer is removed, and a cleaning process is performed to form an isolating layer composed of the gap fill oxide layer inside the substrate.
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