发明名称 |
Field effect transistor and liquid crystal devices including the same |
摘要 |
Thin film transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of between about 100 Å and 2500 Å which are thinner than at least a portion of the source and drain regions and active matrix assemblies including thin film transistors for improved electro-optical displays are provided.
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申请公布号 |
US6242777(B1) |
申请公布日期 |
2001.06.05 |
申请号 |
US19950402374 |
申请日期 |
1995.03.13 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MANO TOSHIHIKO;KODAIRA TOSHIMOTO;OSHIMA HIROYUKI |
分类号 |
G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786;(IPC1-7):H01L27/01;H01L29/04 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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