CONDUCTIVE SINTERED SPUTTERING TARGET MATERIAL FOR FORMING OPTICAL RECORDING MEDIUM DIELECTRIC PROTECTIVE LAYER, CAPABLE OF HIGH SPEED FILM DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a conductive sintered sputtering target material for forming optical recording medium dielectric protective layer, capable of high speed film deposition. SOLUTION: The conductive sintered sputtering target material is constituted of a hot press sintered compact which has a composition containing, from observation of structure using an electron beam microanalyzer, 5-25 area % SiO2 and 65-90 area % ZnS both as disperse phases and having the balance essentially ZnO existing between the above disperse phases and forming a continuous phase [where ZnO is contained by 5-20 area % as the result of computation of 100 area %-(SiO2 content (area %) + ZnS content (area %))}] and also has 90-99% theoretical density ratio.