发明名称 |
Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor |
摘要 |
A method and a related circuit structure are described for improving the effectiveness of ESD protection in circuit structures realized in a semiconductor substrate overlaid with an epitaxial layer and including at least one ESD protection lateral bipolar transistor realized in the surface of the epitaxial layer. The method consists of forming under the transistor an isolating well that isolates the transistor from the substrate. Advantageously, the transistor can be fully isolated from the substrate by first and second N wells which extend from the surface of the epitaxial layer down to and in contact with the buried well.
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申请公布号 |
US6242793(B1) |
申请公布日期 |
2001.06.05 |
申请号 |
US19980231129 |
申请日期 |
1998.12.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
COLOMBO PAOLO;CAMERLENGHI EMILIO |
分类号 |
H01L29/73;H01L21/331;H01L27/02;H01L29/732;H01L29/735;(IPC1-7):H01L29/73 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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