| 摘要 |
A wafer is held by a wafer holding section, and while a developing solution is supplied onto a top surface of the wafer, the wafer is rotated 180 degrees, whereby performing the heaping of the developing solution on the top surface of the wafer. Thereafter, the rotation of the wafer is stopped, then holding pins are raised to receive the wafer from the wafer holding section, whereby holding the wafer with the wafer being raised above the wafer holding section by the holding pins, and the wafer is left standing for a predetermined time to thereby perform development. In doing as above, the temperature influence exerted on the wafer from the wafer holding section with large heat capacity is prevented, and the temperature distribution of the developing solution within the wafer plane can be prevented from occurring, thus preventing the occurrence of unevenness in the development caused by the temperature difference from occurring and making it possible to perform development processing with uniformity. As a result, when development processing is performed for a substrate, for example, a wafer, uniformity of the processing can be increased.
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