发明名称 |
Method for patterning chemical amplified photoresist |
摘要 |
Disclosed is a method for patterning a chemical amplified photoresist which improves resolution by adjusting a diffusion direction of photo acid. The method for patterning a chemical amplified photoresist includes the steps of depositing a chemical amplified photoresist on an etching target layer, selectively exposing the chemical amplified photoresist to generate photo acid on a surface of the exposed chemical amplified photoresist, diffusing the photo acid in only one direction by performing PEB process on condition that electric field is applied to the chemical amplified photoresist, and patterning the chemical amplified photoresist by developing process to remove only a portion where the photo acid is diffused.
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申请公布号 |
US6242164(B1) |
申请公布日期 |
2001.06.05 |
申请号 |
US19980061032 |
申请日期 |
1998.04.16 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHOI YONG KYOO;KIM BYEONG CHAN |
分类号 |
H01L21/027;G03F7/38;(IPC1-7):G03F7/38 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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