| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a gate oxide layer from being contaminated by diffusion of boron ions, by forming a boron-containing silicon layer. CONSTITUTION: A field oxide layer(2) is formed on a substrate(1) to define a plurality of device formation regions. A gate(3,4) is formed in the center portion of the respective device formation regions. A diffusion blocking layer is formed on the side surface of the gate. A boron-containing silicon layer is deposited on the entire surface. N-type impurity ions are implanted into a region selected from the plurality of the device formation regions to form an n-type low density source/drain by an ion implantation process using a photoresist pattern as an ion implantation mask. The photoresist pattern is removed, and an oxide layer is deposited on the entire surface. The oxide layer and the boron-containing silicon layer under the oxide layer are dry-etched to form a sidewall(7) on the side surface of the gate and to form a photoresist pattern. The device formation region where the n-type low density source/drain is formed is exposed, and impurity ions are implanted to form an n-type high density source/drain(8). The photoresist pattern is removed. Boron ions are diffused from the boron-containing silicon layer to the substrate by an annealing process to form a halo prevention region(12) in the n-type low density source/drain and in a boundary region of the substrate. A p-type source/drain is formed in the device formation region where a source/drain is not formed.
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