| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process, by simultaneously etching a titanium nitride layer on aluminum and an intermetal dielectric on a fuse while forming an insulating layer of a proper thickness on the fuse. CONSTITUTION: A fuse(4), an interlayer dielectric(3,5), a contact and the first metal interconnection are formed on the upper portion of a peripheral region of a semiconductor memory. An intermetal dielectric(6) is deposited on the entire structure. A contact is formed in the structure having the intermetal dielectric. The second metal interconnection stacked of an aluminum layer(9,12) and a titanium nitride layer(8,1011,13) is patterned. A plasma-enhanced tetra-ethyl-ortho-silicate(PETEOS) oxide layer(7) is stacked on the entire structure having the metal interconnection. After a part of the PETEOS oxide layer is selectively etched, the structure having the PETEOS oxide layer is exposed to plasma using CF4+CHF3+Ar gas in plasma etching equipment. The titanium nitride layer on the aluminum layer and the intermetal dielectric on the fuse are selectively etched.
|
