发明名称 PLANAR CRYSTAL TUNGSTEN CARBIDE-CONTAINING POWDER AND PRODUCING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To produce a raw material optimum for producing a hard sintered material simultaneously improved in hardness and toughness by dispersing planar crystal tungsten carbide and to provide a method for producing the same. SOLUTION: A powdery mixture of iron-group metal, W and carbon or composed of mutual compound powders thereamong is subjected to heating treatment in a vacuum or in a nonoxidizing atmosphere in a state in which bulk density is low. The obtained planar crystal tungsten carbide is high in an aspect ratio and a content, so that the hardness and toughness of the sintered hard material using this can simultaneously be improved.
申请公布号 JP2001152203(A) 申请公布日期 2001.06.05
申请号 JP19990335952 申请日期 1999.11.26
申请人 TOSHIBA TUNGALOY CO LTD 发明人 KOBAYASHI MASAKI;KINOSHITA SATOSHI;HAYASHI KOJI
分类号 C04B35/56;B22F1/00;C04B35/64;C22C1/05;C22C29/08 主分类号 C04B35/56
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