发明名称 |
PLANAR CRYSTAL TUNGSTEN CARBIDE-CONTAINING POWDER AND PRODUCING METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To produce a raw material optimum for producing a hard sintered material simultaneously improved in hardness and toughness by dispersing planar crystal tungsten carbide and to provide a method for producing the same. SOLUTION: A powdery mixture of iron-group metal, W and carbon or composed of mutual compound powders thereamong is subjected to heating treatment in a vacuum or in a nonoxidizing atmosphere in a state in which bulk density is low. The obtained planar crystal tungsten carbide is high in an aspect ratio and a content, so that the hardness and toughness of the sintered hard material using this can simultaneously be improved. |
申请公布号 |
JP2001152203(A) |
申请公布日期 |
2001.06.05 |
申请号 |
JP19990335952 |
申请日期 |
1999.11.26 |
申请人 |
TOSHIBA TUNGALOY CO LTD |
发明人 |
KOBAYASHI MASAKI;KINOSHITA SATOSHI;HAYASHI KOJI |
分类号 |
C04B35/56;B22F1/00;C04B35/64;C22C1/05;C22C29/08 |
主分类号 |
C04B35/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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