发明名称 Semiconductor physical quantity sensor and production method thereof
摘要 A semiconductor physical quantity sensor includes a substrate, a beam-structure movable portion and a fixed portion. The beam-structure movable portion is suspended by four anchors formed of polycrystalline films. A rectangular mass is suspended between beams. Movable electrodes project from both sides of the mass. First fixed electrodes and second fixed electrodes are fixedly provided on the surface of the substrate. The substrate has a laminated structure, wherein an oxide film, attaching film, insulating films, conductive film and insulating film are laminated on the substrate. An anchor formed from the conductive film is electrically connected to the attaching film. An electrode pad made of an aluminum film is provided the above the anchor. Because this structure enables the potential of the attaching film to be fixed, parasitic capacitance can be decreased.
申请公布号 US6240782(B1) 申请公布日期 2001.06.05
申请号 US19990247865 申请日期 1999.02.11
申请人 DENSO CORPORATION 发明人 KATO NOBUYUKI;YAMAMOTO TOSHIMASA;FUKADA TSUYOSHI;SAKAI MINEKAZU
分类号 G01L1/14;B81B3/00;B81B7/00;G01P15/08;G01P15/125;H01L29/84;(IPC1-7):G01P15/125 主分类号 G01L1/14
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