CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A capacitor of a semiconductor memory device is provided to increase capacitance while having compatibility with a silicon process, and to easily perform an integration process by obviating the necessity of a diffusion blocking layer for preventing a silicon reaction. CONSTITUTION: A lower electrode(41) composed of polysilicon is formed on a semiconductor substrate. A diffusion barrier layer(46) is formed on the lower electrode. A high dielectric layer(47) is formed on the diffusion barrier layer. An upper electrode(49) composed of a noble metal or conductive oxide layer of the noble metal is formed on the high dielectric layer.