| 摘要 |
PURPOSE: A method for manufacturing a dual silicon device of which a source, a body and a substrate are in contact is provided to reduce resistance and to distribute electrostatic heat concentrated on the body, by connecting the source, the body and the silicon substrate to make the potential of the body maintain the potential of the source. CONSTITUTION: A buried oxide layer(102) is formed on a base substrate(101). A predetermined portion of the buried oxide layer is etched to expose the base substrate. An epi layer(103) is formed on the exposed base substrate. A semiconductor layer is formed on the buried oxide layer and the epi layer. A predetermined portion of the semiconductor layer is etched to form a semiconductor substrate as a body layer. A gate region, a drain region(107) and a source region(108) are formed on the semiconductor substrate. A body electrode, a gate electrode, a drain electrode(109) and a source electrode(111) are formed in the body layer, the gate region, the drain region and the source region.
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