| 摘要 |
<p>A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material (14) with two major surfaces having thereon an anisotropic ferromagnetic thin-film (12, 13; 12', 13') of differing thicknesses. These bit structures (17) are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series, parallel selectively connected members (11',17,20; 74,70,17,90,78; 103,104,17,100,102) of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.</p> |
