Process for the integration of PIN diodes comprises depositing a diode structure on a substrate, structuring a mesa structure, producing a metal bump, bonding a heat sink to the bump

摘要

Process for the integration of PIN diodes comprises depositing a diode structure (2) on a SOI substrate; structuring a mesa structure up to a substrate insulating layer (12); producing a metal bump (5); bonding a heat sink (7) with a bond layer (8) to the bump using a flip-chip technique; completely removing the remaining substrate and structuring a lower contact; planarizing and applying an upper contact. An Independent claim is also included for an integrated high frequency semiconductor element. Preferred Features: A side wall passivation (3) made of silicon-rich silicon oxide or silicon nitride is formed on the mesa structure.