发明名称 Delay control circuit for synchronous dynamic direct access memory has delay model for delaying external clock signal according to asymmetry, control signal generator, two delay devices
摘要 <p>The circuit has a delay model for delaying an external clock signal by the asymmetry, a signal generator for producing control signals in response to the clock signals, a delay device with a large delay unit element for delaying the external clock to produce a first delay control loop clock and a second delay device with a small delay unit element for delaying the first delay control loop clock to produce a second delay control loop clock. The circuit has a delay model for delaying an external clock signal (CLK) by the asymmetry (tdl), a signal generator for producing control signals in response to the external and delayed clock signals, a first delay device with a large delay unit element for delaying the external clock signal in response to the control signals to produce a first delay control loop clock signal and a second delay device with a small delay unit element for delaying the first delay control loop clock signal to produce a second delay control loop clock signal.</p>
申请公布号 DE10054141(A1) 申请公布日期 2001.05.31
申请号 DE2000154141 申请日期 2000.11.02
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 LEE, SEON-HOON;YANG, JUNG-IL
分类号 G11C11/407;G06F1/10;G11C7/22;G11C11/4076;H03K3/354;H03K5/13;H03K5/131;H03L7/00;(IPC1-7):G11C7/22 主分类号 G11C11/407
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