发明名称 |
Delay control circuit for synchronous dynamic direct access memory has delay model for delaying external clock signal according to asymmetry, control signal generator, two delay devices |
摘要 |
<p>The circuit has a delay model for delaying an external clock signal by the asymmetry, a signal generator for producing control signals in response to the clock signals, a delay device with a large delay unit element for delaying the external clock to produce a first delay control loop clock and a second delay device with a small delay unit element for delaying the first delay control loop clock to produce a second delay control loop clock. The circuit has a delay model for delaying an external clock signal (CLK) by the asymmetry (tdl), a signal generator for producing control signals in response to the external and delayed clock signals, a first delay device with a large delay unit element for delaying the external clock signal in response to the control signals to produce a first delay control loop clock signal and a second delay device with a small delay unit element for delaying the first delay control loop clock signal to produce a second delay control loop clock signal.</p> |
申请公布号 |
DE10054141(A1) |
申请公布日期 |
2001.05.31 |
申请号 |
DE2000154141 |
申请日期 |
2000.11.02 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE, SEON-HOON;YANG, JUNG-IL |
分类号 |
G11C11/407;G06F1/10;G11C7/22;G11C11/4076;H03K3/354;H03K5/13;H03K5/131;H03L7/00;(IPC1-7):G11C7/22 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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