| 摘要 |
An apparatus for the uniform thermal treatment of semiconductor wafers by gas conduction holds the wafer in place over a gas filled cavity in opposition to a thermal mass maintained at an appropriate temperature. Gas is introduced behind the semiconductor wafer adjacent its periphery to produce a near-constant gas pressure across the backside of the wafer. The constant pressure produces constant thermal conductivity. Consequently, heat conduction is uniform, the temperature of the wafer is uniform and uniform processing is accomplished across the wafer.
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