| 摘要 |
<p>The invention concerns a method for making a high-performance photovoltaic device or cell, characterised in that it consists in successively applying to a silicon slice or wafer (1) of suitable quality two sequences of the following operations a) and b): a) a set of various operations for obtaining a standard photovoltaic device or cell highly doped at the front; and b) a set of specific additional operations consisting in ion implantation on the front surface to make it amorphous, followed by at least a heat treatment cycle, called main cycle, itself comprising two separate phases, namely, a phase which consists in heating the slice or wafer (1) to a temperature ranging between 450 °C and 600 °C, and a sudden equivalent hardening or quenching phase.</p> |
