发明名称 METHOD FOR DESIGNING PHOTOMASK, APPARATUS FOR DESIGNING PHOTOMASK, MEMORY MEDIUM READABLE WITH COMPUTER, PHOTOMASK, PHOTORESIST, PHOTOSENSITIVE RESIN, SUBSTRATE, MICROLENS AND OPTICAL ELEMENT
摘要 PROBLEM TO BE SOLVED: To easily design a photomask even when the depth of desired photoresist patterns and the kinds of the photoresist vary. SOLUTION: A resist sensitivity curve indicating the depth of the resist to the exposure of the photoresist to be used and microregion data made correspondent to the plural light transmittances for a prescribed graduation compound are previously set in the method for designing the photomask which controls the quantity of the light cast to the photoresist with the micropatterns which are the aggregate of the microregions having the respectively prescribed light transmittances. In addition, the resist depths set by each of the microregions are converted to the exposure by using the resist sensitivity curve and this exposure is converted to the light transmittance. This light transmittance is converted to the microregion data, by which the more specific micropatterns are formed.
申请公布号 JP2001147515(A) 申请公布日期 2001.05.29
申请号 JP20000195724 申请日期 2000.06.29
申请人 RICOH CO LTD 发明人 SATO YASUHIRO
分类号 G03F1/68;G03F7/00;G03F7/26 主分类号 G03F1/68
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