Gab SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress defects by suppressing a crack due to a thermal expansion coefficient difference and lattice constant difference of a growing III-V compound semiconductor layer and a substrate crystal. SOLUTION: The method for manufacturing a GaN semiconductor element comprises the steps of forming a structure of a III-V compound semiconductor film 15 by an epitaxial growth by using a substrate for limiting a growing area 13 by a mask 14 (b), and developing the structure until the structure is covered with the mask 14 (c). The method further comprises the step of completely embedding the structure (d). The method further comprises the step of forming a III-V compound semiconductor growth layer having a finally flat surface (e).