发明名称 Method of cleaning film forming apparatus, cleaning system for carrying out the same and film forming system
摘要 A cleaning gas is supplied into a processing chamber defined by a processing vessel included in a film forming system, and the temperature of a gas contained in the processing vessel is measured continuously for a predetermined time by a gas temperature measuring means disposed in the processing vessel. The temperature measured by the gas temperature measuring means rises gradually while the cleaning gas flowing through the processing chamber is reacting with an unnecessary film deposited on the surfaces of the processing vessel. A cleaning operation terminating point is determined on the basis of the time-varying measured temperature of the gas measured by the gas temperature measuring means. Preferably, the cleaning operation terminating point determining means determines that the cleaning operation is to be terminated at a time point a certain time after the variation of the measured temperature past a peak. Consequently, the cleaning operation terminating point can exactly be determined so that the unnecessary film can substantially completely be removed without causing insufficient cleaning or overetching.
申请公布号 US6238488(B1) 申请公布日期 2001.05.29
申请号 US19990320451 申请日期 1999.05.27
申请人 TOKYO ELECTRON LIMITED 发明人 FUJITA YOSHIYUKI;HIRAI JUN;IITAKA AZUSA;TAMURA TATSUYA
分类号 C23C14/00;C23C16/44;C23C16/52;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):B08B7/04 主分类号 C23C14/00
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