| 摘要 |
The present invention discloses a method for fabricating a trench isolation structure in a semiconductor device. A first insulating layer and a first anti-oxidation layer are formed on a semiconductor substrate. Then, a predetermined region of the surface of the substrate is exposed. Thereafter, a trench is formed by etching the exposed surface of the substrate. A second insulating layer is formed along an inner surface of the trench. Next, the first anti-oxidation layer is isotropically etched to a predetermined thickness. A second anti-oxidation layer is formed on the resultant structure. A third insulating layer is formed on the second anti-oxidation layer. The third insulating layer and the first and second anti-oxidation layers are planarized. Finally, the first anti-oxidation layer is removed.
|
