| 摘要 |
PROBLEM TO BE SOLVED: To provide a variable resistive element, which can be changed continuously in resistance and furthermore almost linearly changed in resistance corresponding to an applied voltage. SOLUTION: Two diffusion layers 2 and 3 of N-type regions spaced apart at a certain distance are provided inside a P-type semiconductor substrate 1, so as to be flush with the top surface of the substrate 1, and the diffusion layers 2 and 3 are made to serve as diffusion resistors 4 and 5. An insulating layer 6 is formed on a region of the substrate 1 sandwiched, in-between the diffusion layers 2 and 3 in the lengthwise direction of the diffusion layers 2 and 3. Furthermore, a gate 7 of a conductor is provided on the insulating layer 6. A gradient voltage is applied to the gate 7 in its lengthwise direction and varied in state, so that diffusion resistors 4 and 5 are changed in resistance.
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