| 发明名称 |
METHOD AND APPARATUS FOR INTEGRATING METAL NITRIDE FILM WITH SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method for integrating metallic nitride film with a semiconductor device. SOLUTION: A dielectric layer is formed on the substrate. The dielectric layer is exposed in a first chamber to an active nitride atom formed in a second chamber, in order to form the dielectric layer passivated by nitride. The metallic film is successively formed on the dielectric layer passivated by nitride. |
| 申请公布号 |
JP2001148380(A) |
申请公布日期 |
2001.05.29 |
| 申请号 |
JP20000290804 |
申请日期 |
2000.09.25 |
| 申请人 |
APPLIED MATERIALS INC |
发明人 |
NARWANKAR PRAVIN;SAHIN TURGUT |
| 分类号 |
C23C16/34;C23C16/40;C23C16/46;H01L21/02;H01L21/28;H01L21/285;H01L21/31;H01L21/316;H01L21/768;H01L21/8242;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/78 |
主分类号 |
C23C16/34 |
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