| 摘要 |
A magnet layer or antiferromagnetic thin film layer composed of a thin film serving as a bias magnetic field applying member is provided at both ends of a magnetic thin film having a magneto-impedance effect so that a bias magnetic field Hbi is applied to the magnetic thin film layer in parallel with the direction of application of an external magnetic field Hex to the magnetic thin film layer. As the magnetic thin film layer, a soft magnetic material having the composition ColTamHfn, FehRiOl, (Co1-vTv)xMyOzXw, T100-d-e-f-gXdMeZfQg or T100-p-q-f-gSipAlqMeZfQg is used.
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