| 摘要 |
PROBLEM TO BE SOLVED: To stably generate a plasma to improve the quality of film formation by the plasma. SOLUTION: A plasma is generated by applying high frequency electric power to a processing gas supplied into a reaction chamber S, and a film is formed on a substrate 7 held in the reaction chamber S using the plasma, The plasma is generated under such conditions that may easily cause plasma discharging, and then the conditions are changed to such ones required for film formation to form the film. The conditions to be changed are a distance between electrodes 4, 5 and high frequency electric power applied to a space between the electrodes 4, 5.
|
