Enhancement of light emission from silicon PN reverse breakdown structures.,申请号ZA19990007571-传众专利搜索

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发明名称	Enhancement of light emission from silicon PN reverse breakdown structures.
摘要
申请公布号	ZA9907571(B)	申请公布日期	2001.05.25
申请号	ZA19990007571	申请日期	1999.12.09
申请人	UNIVERSITY OF PRETORIA	发明人	LUKAS WILLEM SNYMAN;HERZL AHARONI;MONUKO DU PLESSIS
分类号	F21V;H01L	主分类号	F21V
代理机构		代理人
主权项
地址

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