| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of etching a substrate capable of accurately detecting the timing at which a through-hole penetrates the substrate, and a method of manufacturing semiconductor devices using the method of etching a substrate. SOLUTION: An end-point detecting layer 31 containing phosphorus is formed on the underside of a silicon substrate 10, the underside having a recess 10c and an upper electrode 13 and a hinge member 14 formed in the recess 10c. Then, a mirror is formed on the substrate 10, and a resist film 33 is formed, after which the substrate 10 is dry-etched to form a through hole. At this time, when the layer 31 is exposed to be etched, a reaction product containing phosphorus contained in the layer 31 is diffused inside an RIE chamber 42. A quadruple mass spectrometer 41 is used to detect phosphorus contained in the reaction product, and a timing for terminating the etching is determined based on the timing at which phosphorus has been detected.
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