| 摘要 |
PROBLEM TO BE SOLVED: To prevent diffusion of impurities of a p-type clad layer inverting to an n-type and thus avoid its irregular profile upon re-growth. SOLUTION: In this semiconductor laser element, at least an n-type first cladding layer, an active layer and a p-type second clad layer are laminated on an n-type semiconductor substrate, an n-type current blocking layer having a stripe shape and a groove-shaped defect part is laminated on the second clad layer, and at least a p-type third cladding layer is formed on the current block layer, including the stripe shape and defect part. The second clad layer is set to have a p-type impurity concentration of 3×1017 cm-3 to 2×1018 cm-3.
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