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发明名称
EPITAXIAL SILICON WAFER AND ITS PRODUCTION METHOD, AND SUBSTRATE FOR EPITAXIAL SILICON WAFER
摘要
申请公布号
KR20010042278(A)
申请公布日期
2001.05.25
申请号
KR1020007010819
申请日期
2000.09.29
申请人
发明人
分类号
H01L21/20
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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