| 摘要 |
<p>1,272,964. Semi-conductor devices. SIEMENS A.G. 23 July, 1969, No. 37162/69. Heading H1K. A housed semi-conductor device has a semiconductor wafer which bears at least one contact electrode on each face and which is held under pressure between two foils of ductile material by the contact faces of two terminal connecting- portions which form slidable solder-free connections with the contact electrodes. The areas to which significant pressure is applied on opposite faces of the wafers are congruent in contour and are in register, as that one sided force on the wafer cannot result from the build-up of ductile material at certain locations. The connecting portions may be copper plungers, and suitable foil materials include aluminium, fully annealed silver, and alloys containing one or more of cadmium, indium, and lead. The devices may be diodes, transistors, or controlled rectifiers. The construction and housing of a controlled rectifier is described and illustrated in detail.</p> |
