| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of processes, when high and low breakdown voltage transistors are formed on the same semiconductor substrate. SOLUTION: In a method for manufacturing a COMS semiconductor device, that is equipped with P-channel type high and low breakdown voltage transistors and N-channel type ones on the same semiconductor substrate, a P-source/drain layer 13 of the P-channel type high breakdown voltage transistor and a P-well region 12, where the N-channel type low breakdown voltage transistor is formed at the inside are formed by the same process, and at the same time an N-type source/drain layer 10 of the N-channel type high breakdown voltage transistor and an N-well region 9, where the P-channel type low breakdown voltage transistor is formed inside, are formed by the same process.
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