发明名称 METHOD FOR DICING MESA-DIODES
摘要 The invention relates to the manufacture of semiconductor elements (10), in which manufacturing process a part of a semiconductor body (11) having a silicon substrate from which the semiconductor elements (10) are formed is removed by means of powder blasting. For this purpose, the surface of the semiconductor body (11) is provided with a mask pattern (40). The (111) crystal orientation is chosen as the crystal orientation of the substrate (32), and the longitudinal direction (M) of the mask pattern (40) is aligned with respect to the (110) crystal orientation (L) of the substrate (32) in such a manner that the removed part of the semiconductor body (11) has a symmetrical profile when viewed in cross-section.
申请公布号 WO0122475(A3) 申请公布日期 2001.05.25
申请号 WO2000EP08977 申请日期 2000.09.13
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 BOUTEN, PETRUS, C., P.
分类号 H01L21/329;B24C3/32;H01L21/304;H01L21/78;H01L29/04 主分类号 H01L21/329
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