LIGHT RECEIVING ELEMENT ARRAY

摘要

PROBLEM TO BE SOLVED: To provide a light receiving element array in which the size and pitch of the light receiving element array can be decreased and crosstalk to an adjacent light receiving element can be reduced. SOLUTION: In the light receiving element array having a mesa structure formed by isolation etching a light receiving element comprising a multilayer semiconductor layer, an n-InP layer 32, an I-InGaAs layer (light absorbing layer) 34, and a p-InP layer (window layer) 36 are formed on an n-InP substrate 30. Elements are isolated by etching an InGaAs layer 26 and an InP layer 38 and coated with an insulation film 38. A p-type ohmic electrode 40 is formed on the p-InP layer 36 of each light receiving element and a common n-type ohmic electrode 42 is formed on the rear surface of the n-InP substrate 30.